d u a l p - c h a n n e l e n h a n c e m e n t m o d e m o s f e t c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . b . 3 - n o v . , 2 0 0 8 w w w . a n p e c . c o m . t w 1 a n p e c r e s e r v e s t h e r i g h t t o m a k e c h a n g e s t o i m p r o v e r e l i a b i l i t y o r m a n u f a c t u r a b i l i t y w i t h o u t n o t i c e , a n d a d v i s e c u s t o m e r s t o o b t a i n t h e l a t e s t v e r s i o n o f r e l e v a n t i n f o r m a t i o n t o v e r i f y b e f o r e p l a c i n g o r d e r s . a p m 9 9 3 3 k f e a t u r e s a p p l i c a t i o n s - 2 0 v / - 3 . 4 a , r d s ( o n ) = 4 5 m w ( t y p . ) @ v g s = - 4 . 5 v r d s ( o n ) = 5 2 m w ( t y p . ) @ v g s = - 3 v r d s ( o n ) = 6 0 m w ( t y p . ) @ v g s = - 2 . 7 v s u p e r h i g h d e n s e c e l l d e s i g n r e l i a b l e a n d r u g g e d l e a d f r e e a n d g r e e n d e v i c e s a v a i l a b l e ( r o h s c o m p l i a n t ) p o w e r m a n a g e m e n t i n n o t e b o o k c o m p u t e r , p o r t a b l e e q u i p m e n t a n d b a t t e r y p o w e r e d s y s - t e m s p i n d e s c r i p t i o n o r d e r i n g a n d m a r k i n g i n f o r m a t i o n p - c h a n n e l m o s f e t t o p v i e w o f s o p - 8 s1 g1 s2 g2 d1 d1 d2 d2 d1 g1 s1 d1 (2) (1) (7) (8) d2 g2 s2 d2 (4) (3) (5) (6) n o t e : a n p e c l e a d - f r e e p r o d u c t s c o n t a i n m o l d i n g c o m p o u n d s / d i e a t t a c h m a t e r i a l s a n d 1 0 0 % m a t t e t i n p l a t e t e r m i n a - t i o n f i n i s h ; w h i c h a r e f u l l y c o m p l i a n t w i t h r o h s . a n p e c l e a d - f r e e p r o d u c t s m e e t o r e x c e e d t h e l e a d - f r e e r e q u i r e m e n t s o f i p c / j e d e c j - s t d - 0 2 0 c f o r m s l c l a s s i f i c a t i o n a t l e a d - f r e e p e a k r e f l o w t e m p e r a t u r e . a n p e c d e f i n e s ? g r e e n ? t o m e a n l e a d - f r e e ( r o h s c o m p l i a n t ) a n d h a l o g e n f r e e ( b r o r c l d o e s n o t e x c e e d 9 0 0 p p m b y w e i g h t i n h o m o g e n e o u s m a t e r i a l a n d t o t a l o f b r a n d c l d o e s n o t e x c e e d 1 5 0 0 p p m b y w e i g h t ) . apm9933 handling code temperature range package code package code k : sop-8 operating junction temperature range c : -55 to 150 o c handling code tr : tape & reel assembly material l : lead free device g : halogen and lead free device apm9933 k : apm9933 xxxxx xxxxx - date code assembly material
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . b . 3 - n o v . , 2 0 0 8 w w w . a n p e c . c o m . t w 2 a p m 9 9 3 3 k a b s o l u t e m a x i m u m r a t i n g s ( t a = 2 5 c u n l e s s o t h e r w i s e n o t e d ) e l e c t r i c a l c h a r a c t e r i s t i c s ( t a = 2 5 c u n l e s s o t h e r w i s e n o t e d ) symbol parameter rating unit v dss drain - source voltage - 20 v gss gate - source voltage 12 v i d * c ontinuous drain current - 3.4 i dm * 300 m s pulsed drain current v gs = - 4.5 v - 15 a i s * diode c ontinuous f orward c urrent - 2 a t j maximum junction temperature 1 50 t stg storage temperature range - 55 to 150 c t a =25 c 2 p d * maximum power dissipation t a =100 c 0.8 w r q ja * thermal resistance - junction to ambient 62.5 c / w note : *surface mounted on 1in 2 pad area, t 10sec. apm 9933k symbol parameter test condition s min. typ. max. unit static characteristics bv dss drain - source breakdown voltage v gs =0v, i ds = - 250 m a - 20 - - v d bv dss d t j breakdown voltage temperature coefficient i d = - 250 m a , referenced to 25 c - - 16 - mv / c v ds = - 16 v, v gs =0v - - - 1 i dss zero gate voltage drain current t j =85 c - - - 30 m a v gs(th) gate threshold voltage v ds =v gs , i ds = - 250 m a - 0.5 - 0.7 - 1 v i gss gate leakage current v gs = 12 v, v ds =0v - - 100 na d v gs(th) d t j gate threshold voltage temperatu re coefficient i d = - 250 m a , referenced to 25 c - 2.5 - mv / c v gs = - 4.5 v, i ds = - 3.4 a - 45 70 v gs = - 3 v, i ds = - 2.9 a - 52 80 r ds(on) a drain - source on - state resistance v gs = - 2.7 v, i ds = - 2.6 a - 60 100 m w v sd a diode forward voltage i sd = - 2 a, v gs =0v - - 0.7 - 1.3 v
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . b . 3 - n o v . , 2 0 0 8 w w w . a n p e c . c o m . t w 3 a p m 9 9 3 3 k e l e c t r i c a l c h a r a c t e r i s t i c s ( c o n t . ) ( t a = 2 5 c u n l e s s o t h e r w i s e n o t e d ) apm 9933 k symbol parameter test condition s min. typ. max. unit gate charge characteristics b q g total gate charge - 12.7 15 q gs gate - source charge - 1.8 - q gd gate - drain charge v ds = - 10 v,v gs = - 4.5v, i ds = - 3.4a - 2.8 - nc dynamic characteristics b r g gate r esistance v gs = 0 v,v ds =0v ,f=1mhz - 9.8 - w c iss input capacitance - 1290 - c oss output capacitance - 300 - c rss reverse transfer capacitance v gs =0v, v ds = - 15v, f requency =1.0mhz - 210 - pf t d(on) turn - on delay time - 12 22 t r turn - on rise time - 25 46 t d(off) turn - off delay time - 52 95 t f turn - off fall time v dd = - 10 v, r l = 10 w , i d s = - 1 a, v gen = - 4.5v , r g = 6 w - 18 33 ns note a : pulse test ; pulse width 3 00 m s, duty cycle 2%. note b : guaranteed by design, not subject to production testing.
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . b . 3 - n o v . , 2 0 0 8 w w w . a n p e c . c o m . t w 4 a p m 9 9 3 3 k 1e-4 1e-3 0.01 0.1 1 10 30 1e-3 0.01 0.1 1 2 mounted on 1in 2 pad r q ja : 62.5 o c/w 0.01 0.02 0.05 0.1 0.2 single pulse duty = 0.5 t y p i c a l o p e r a t i n g c h a r a c t e r i s t i c s -i d - drain current (a) d r a i n c u r r e n t t j - j u n c t i o n t e m p e r a t u r e ( c ) s a f e o p e r a t i o n a r e a - v d s - d r a i n - s o u r c e v o l t a g e ( v ) t h e r m a l t r a n s i e n t i m p e d a n c e s q u a r e w a v e p u l s e d u r a t i o n ( s e c ) p o w e r d i s s i p a t i o n p tot - power (w) t j - j u n c t i o n t e m p e r a t u r e ( c ) -i d - drain current (a) 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 t a =25 o c 0 20 40 60 80 100 120 140 160 0 1 2 3 4 t a =25 o c,v g =-4.5v 0.01 0.1 1 10 100 0.01 0.1 1 10 50 rds(on) limit 1s t a =25 o c 10ms 1ms 100ms dc normalized transient thermal resistance
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . b . 3 - n o v . , 2 0 0 8 w w w . a n p e c . c o m . t w 5 a p m 9 9 3 3 k r ds(on) - on - resistance (m w ) d r a i n - s o u r c e o n r e s i s t a n c e - i d - d r a i n c u r r e n t ( a ) t j - j u n c t i o n t e m p e r a t u r e ( c ) g a t e t h r e s h o l d v o l t a g e normalized threshold vlotage - v d s - d r a i n - s o u r c e v o l t a g e ( v ) -i d - drain current (a) o u t p u t c h a r a c t e r i s t i c s t r a n s f e r c h a r a c t e r i s t i c s - v g s - g a t e - s o u r c e v o l t a g e ( v ) -i d - drain current (a) 0 1 2 3 4 5 0 3 6 9 12 15 -2v v gs = -3, -4, -5, -6, -7, -8, -9, -10v -1.5v -1v 0 3 6 9 12 15 20 40 60 80 100 v gs = -2.7v v gs = -4.5v v gs = -3v 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 3 6 9 12 15 t j =-55 o c t j =125 o c t j =25 o c -50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 i ds = -250 m a t y p i c a l o p e r a t i n g c h a r a c t e r i s t i c s ( c o n t . )
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . b . 3 - n o v . , 2 0 0 8 w w w . a n p e c . c o m . t w 6 a p m 9 9 3 3 k - v d s - d r a i n - s o u r c e v o l t a g e ( v ) d r a i n - s o u r c e o n r e s i s t a n c e normalized on resistance t j - j u n c t i o n t e m p e r a t u r e ( c ) c - capacitance (pf) - v s d - s o u r c e - d r a i n v o l t a g e ( v ) s o u r c e - d r a i n d i o d e f o r w a r d -i s - source current (a) c a p a c i t a n c e g a t e c h a r g e q g - g a t e c h a r g e ( n c ) -v gs - gate-source voltage (v) -50 -25 0 25 50 75 100 125 150 0.0 0.4 0.8 1.2 1.6 2.0 2.4 v gs = -4.5v i ds = -3.4a r on @t j =25 o c: 45m w 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.1 1 10 t j =150 o c t j =25 o c 0 4 8 12 16 20 0 500 1000 1500 2000 2500 frequency=1mhz ciss coss crss 0 3 6 9 12 15 0 1 2 3 4 5 v ds = -10v i ds = -3.4a t y p i c a l o p e r a t i n g c h a r a c t e r i s t i c s ( c o n t . )
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . b . 3 - n o v . , 2 0 0 8 w w w . a n p e c . c o m . t w 7 a p m 9 9 3 3 k p a c k a g e i n f o r m a t i o n s o p - 8 s y m b o l min. max. 1.75 0.10 0.17 0.25 0.25 a a1 c d e e1 e h l millimeters b 0.31 0.51 sop-8 0.25 0.50 0.40 1.27 min. max. inches 0.069 0.004 0.012 0.020 0.007 0.010 0.010 0.020 0.016 0.050 0 0.010 1.27 bsc 0.050 bsc a2 1.25 0.049 0 8 0 8 d e e e 1 see view a c b h x 4 5 a a 1 a 2 l view a 0 . 2 5 seating plane gauge plane note: 1. follow jedec ms-012 aa. 2. dimension ? d ? does not include mold flash, protrusions or gate burrs. mold flash, protrusion or gate burrs shall not exceed 6 mil per side. 3. dimension ? e ? does not include inter-lead flash or protrusions. inter-lead flash and protrusions shall not exceed 10 mil per side. 3.80 5.80 4.80 4.00 6.20 5.00 0.189 0.197 0.228 0.244 0.150 0.157
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . b . 3 - n o v . , 2 0 0 8 w w w . a n p e c . c o m . t w 8 a p m 9 9 3 3 k application a h t1 c d d w e1 f 330.0 ? 2.00 50 min. 12.4+2.00 - 0.00 13.0+0.50 - 0.20 1.5 min. 20.2 min. 12.0 ? 0.30 1.75 ? 0.10 5.5 ? 0.05 p 0 p1 p 2 d 0 d1 t a 0 b 0 k 0 sop - 8 4.0 ? 0.10 8.0 ? 0.10 2.0 ? 0.05 1.5+0.10 - 0.00 1.5 min. 0.6+0.00 - 0.40 6.40 ? 0.20 5.20 ? 0.20 2.10 ? 0.20 (mm) c a r r i e r t a p e & r e e l d i m e n s i o n s h t1 a d a e 1 a b w f t p0 od0 b a0 p2 k0 b 0 section b-b section a-a od1 p1 d e v i c e s p e r u n i t package type unit quantity sop - 8 tape & reel 2500
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . b . 3 - n o v . , 2 0 0 8 w w w . a n p e c . c o m . t w 9 a p m 9 9 3 3 k test item method description solderability mil - std - 883d - 2003 245 c, 5 sec holt mil - std - 883d - 1005.7 1000 hrs bias @125 c pct jesd - 22 - b, a102 168 hrs, 100 % rh, 121 c tst mil - std - 883d - 1011.9 - 65 c~150 c, 200 cycles r e f l o w c o n d i t i o n ( i r / c o n v e c t i o n o r v p r r e f l o w ) r e l i a b i l i t y t e s t p r o g r a m t 25 c to peak tp ramp-up t l ramp-down ts preheat tsmax tsmin t l t p 25 t e m p e r a t u r e time critical zone t l to t p t a p i n g d i r e c t i o n i n f o r m a t i o n s o p - 8 user direction of feed
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . b . 3 - n o v . , 2 0 0 8 w w w . a n p e c . c o m . t w 1 0 a p m 9 9 3 3 k profile feature sn - pb eutectic assembly pb - free assembly average ramp - up rate (t l to t p ) 3 c/second max. 3 c/second max. preheat - temperature min (tsmin) - temperature max (tsmax) - time (min to max) (ts) 100 c 150 c 60 - 120 seconds 150 c 200 c 60 - 180 seconds time maintained above: - temperature (t l ) - time (t l ) 183 c 60 - 150 seconds 217 c 60 - 150 seconds peak /classification temperature (tp) see table 1 see table 2 time within 5 c of actual peak temperature (tp) 10 - 30 seconds 20 - 40 seconds ramp - down rate 6 c/sec ond max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note: all temperatures refer to topside of the package. measured on the body surface. table 2. pb - free process ? package classification reflow temperatures package thickness volume mm 3 <350 volume mm 3 350 - 2000 volume mm 3 >2000 <1.6 mm 260 +0 c* 260 +0 c* 260 +0 c* 1.6 mm ? 2.5 mm 260 +0 c* 250 +0 c* 245 +0 c* 3 2.5 mm 250 +0 c* 245 +0 c* 245 +0 c* *tolerance: the device manufacturer/supplier shall assure process compatibility up to and including the stated classification temperature (this means peak reflow temperature +0 c. for example 260 c+0 c) at the rated msl level. table 1. snpb eutectic process ? package peak reflow temperature s package thickness volume mm 3 <350 volume mm 3 3 350 <2.5 mm 240 +0/ - 5 c 225 +0/ - 5 c 3 2.5 mm 225 +0/ - 5 c 225 +0/ - 5 c c u s t o m e r s e r v i c e anpec electronics corp. head office : no.6, dusing 1st road, sbip, hsin-chu, taiwan, r.o.c. tel : 886-3-5642000 fax : 886-3-5642050 taipei branch : 2f, no. 11, lane 218, sec 2 jhongsing rd., sindain city, taipei county 23146, taiwan tel : 886-2-2910-3838 fax : 886-2-2917-3838 c l a s s i f i c a t i o n r e f l o w p r o f i l e s
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